Performance optimization of InSe-FETs using high-k dielectric materials for analog/RF applications
Md Akram Ahmad, Muzaffar Imam, Bhubon Chandra Mech, V. Bharath Sreenivasulu
TL;DR
This paper explores how high-k dielectrics improve the performance of InSe-based FETs for analog and RF applications.
Contribution
The study introduces high-k dielectric engineering to enhance analog/RF performance in InSe-FETs.
Findings
Transconductance (gm) increases by 98.3% with high-k dielectrics.
A 9.85% reduction in cut-off frequency (fT) indicates a trade-off between gain and speed.
Abstract
This study investigates the performance of Indium Selenide (InSe)-based field-effect transistors (FETs) incorporating high-k dielectric materials, using atomistic simulations based on the non-equilibrium Green’s function formalism. Initially, the effect of high-k dielectrics on the ON/OFF current ratio (ION/IOFF) is analyzed to assess their suitability for digital applications. Subsequently, key analog and radio-frequency (RF) performance metrics, such as intrinsic gain (AV), transconductance generation factor (TGF), and cut-off frequency (fT), are examined. The results demonstrate notable enhancements: transconductance (gm) increases by 98.3%, TGF by 73.7%, and AV by 72.66%. However, a 9.85% reduction in fT is observed, indicating a trade-off between gain and speed. These findings highlight the potential of high-k dielectric engineering in optimizing InSe-based FETs for next-generation…
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Taxonomy
Topics2D Materials and Applications · Semiconductor Quantum Structures and Devices · Semiconductor materials and interfaces