# Performance optimization of InSe-FETs using high-k dielectric materials for analog/RF applications

## TL;DR

This paper explores how high-k dielectrics improve the performance of InSe-based FETs for analog and RF applications.

## Contribution

The study introduces high-k dielectric engineering to enhance analog/RF performance in InSe-FETs.

## Key findings

- Transconductance (gm) increases by 98.3% with high-k dielectrics.
- A 9.85% reduction in cut-off frequency (fT) indicates a trade-off between gain and speed.

## Abstract

This study investigates the performance of Indium Selenide (InSe)-based field-effect transistors (FETs) incorporating high-k dielectric materials, using atomistic simulations based on the non-equilibrium Green’s function formalism. Initially, the effect of high-k dielectrics on the ON/OFF current ratio (ION/IOFF) is analyzed to assess their suitability for digital applications. Subsequently, key analog and radio-frequency (RF) performance metrics, such as intrinsic gain (AV), transconductance generation factor (TGF), and cut-off frequency (fT), are examined. The results demonstrate notable enhancements: transconductance (gm) increases by 98.3%, TGF by 73.7%, and AV by 72.66%. However, a 9.85% reduction in fT is observed, indicating a trade-off between gain and speed. These findings highlight the potential of high-k dielectric engineering in optimizing InSe-based FETs for next-generation analog and RF circuits.

The online version contains supplementary material available at 10.1038/s41598-025-21242-9.