PMC · DOI:10.1021/acsnano.6c01243·February 16, 2026
Correction to “Hf/Zr Superlattice-Based High‑κ Gate Dielectrics with Dipole Layer Engineering for Advanced CMOS”
Taeyoung Song, Sanghyun Kang, Yu-Hsin Kuo, Jiayi Chen, Lance Fernandes, Nashrah Afroze, Mengkun Tian, Hyoung Won Baac, Changhwan Shin, Asif Islam Khan
Abstract
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TopicsFerroelectric and Negative Capacitance Devices · Semiconductor materials and devices · Semiconductor materials and interfaces