# Correction to “Hf/Zr Superlattice-Based High‑κ Gate Dielectrics with Dipole Layer Engineering for Advanced CMOS”

**Authors:** Taeyoung Song, Sanghyun Kang, Yu-Hsin Kuo, Jiayi Chen, Lance Fernandes, Nashrah Afroze, Mengkun Tian, Hyoung Won Baac, Changhwan Shin, Asif Islam Khan

PMC · DOI: 10.1021/acsnano.6c01243 · 2026-02-16

## Full-text entities

- **Chemicals:** Zr (MESH:D015040)

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Source: https://tomesphere.com/paper/PMC12961942