Recent Advances in Diamond-Capped GaN HEMTs for RF Application
Yuanmeng Xiang, Mei Wu, Haolun Sun, Shiming Li, Hongda Chen, Jiamin Wei, Binyan Yan, Ling Yang, Meng Zhang, Hao Lu, Bin Hou, Xiaohua Ma, Yue Hao
TL;DR
Diamond capping improves cooling in GaN transistors for better performance in high-power RF applications.
Contribution
A review of recent technological advances in integrating diamond capping with GaN HEMTs for thermal management.
Findings
Diamond capping reduces self-heating in GaN HEMTs due to its high thermal conductivity.
Recent progress includes optimized thermal boundary resistance and process compatibility for diamond-GaN integration.
Thermal simulations and film growth techniques have enhanced the performance of diamond-capped devices.
Abstract
Self-heating effects severely limit the performance of gallium nitride high-electron-mobility transistors (GaN HEMTs) in high-power radio frequency (RF) applications. Diamond capping technology leveraging diamond’s exceptional thermal conductivity (>2000 W/m·K) has emerged as a highly promising near-junction cooling solution. However, its integration with GaN HEMTs faces challenges including lattice/thermal mismatch, high thermal boundary resistance (TBR), and process compatibility. This review summarizes recent progress in high-thermal-conductivity diamond film growth, TBR optimization, thermal simulations, and the integrated process with GaN devices. These technological breakthroughs enable diamond-capped GaN HEMTs with an excellent comprehensive performance. Continued advances in these fields will be critical for fully releasing the capabilities of diamond capping technology for GaN…
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Taxonomy
TopicsThermal properties of materials · GaN-based semiconductor devices and materials · Silicon Carbide Semiconductor Technologies