Research on Stress Variations During the 4H-SiC Indentation Process

TL;DR

This study uses simulations and experiments to understand how stress affects 4H-SiC materials during indentation, revealing how pressure influences damage and stress distribution.

Contribution

The paper introduces a validated SPH-based indentation model and mathematical stress characterization for 4H-SiC under varying pressures.

Findings

Penetration depth of abrasive grains into 4H-SiC increases linearly with applied pressure.

Stress-affected zones expand with higher pressure until cracks form, causing fluctuations.

A clear stress distribution pattern emerges during indentation in 4H-SiC.

Abstract

In order to explore the effect of stress on the damage of 4H-SiC materials, this paper employed single abrasive grain indentation simulation based on the Smoothed-Particle Hydrodynamics (SPH) method, and verified the accuracy of the indentation model through an indentation experiment on a single abrasive grain. The research examined the consequences of varying pressures on the processing of 4H-SiC, including parameters such as the depth of abrasive grain penetration, the stress-affected region, and the initiation and propagation of cracks. Subsequently, mathematical models were developed to characterize stress variations under different pressure conditions. The findings reveal several vital insights: First, a discernible linear relationship exists between the depth of abrasive grain penetration into 4H-SiC and the applied pressure. Second, within a specific pressure range, the stress-affected zone within the workpiece enlarges as the applied pressure increases. However, when cracks form within the workpiece, the dimensions of the stress-affected zone exhibit fluctuations. During the abrasive grain indentation phase, a discernible pattern emerges in the stress distribution within the workpiece.

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