Author Correction: Numerical simulation analysis of carbon defects in the buffer on vertical leakage and breakdown of GaN on silicon epitaxial layers
Weicheng Cao, Chunyan Song, Hui Liao, Ningxuan Yang, Rui Wang, Guanghui Tang, Hongyu Ji
Abstract
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TopicsGaN-based semiconductor devices and materials
Correction to: Scientific Reports 10.1038/s41598-023-41678-1, published online 08 September 2023
The original version of this Article contained errors in Figure 2, where the depicted C_N_ Concentration range was incorrect. The original Figure 2 and accompanying legend appear below.Figure 2. The log J-V curve with the concentration of C_N_ from 6 × 10^16^ cm^−3^, 4 × 10^17^ cm^−3^, 6 × 10^17^ cm^−3^ and 6 × 10^18^ cm^−3^, the concentration of C_Ga_ is 50% of each C_N_ above in GaN:C layer.
The original Article has been corrected.