# Author Correction: Numerical simulation analysis of carbon defects in the buffer on vertical leakage and breakdown of GaN on silicon epitaxial layers

**Authors:** Weicheng Cao, Chunyan Song, Hui Liao, Ningxuan Yang, Rui Wang, Guanghui Tang, Hongyu Ji

PMC · DOI: 10.1038/s41598-024-60017-6 · Scientific Reports · 2024-04-23

## Full-text entities

- **Chemicals:** silicon (MESH:D012825), carbon (MESH:D002244), GaN (MESH:C050366)

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