Correction: Efficiency improvement by using metal–insulator-semiconductor structure in InGaN/GaN micro-light-emitting diodes
Jian Yin, David Hwang, Hossein Zamani Siboni, Ehsanollah Fathi, Reza Chaji, Dayan Ban
Abstract
Genes, proteins, chemicals, diseases, species, mutations and cell lines named across the full text — each resolved to its canonical identifier and authoritative record.
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Taxonomy
TopicsGaN-based semiconductor devices and materials · Ga2O3 and related materials · Semiconductor materials and devices
Correction **: ** Front. Optoelectron. 17, 8 (2024)
https://doi.org/10.1007/s12200-024-00111-9
Following publication of the original article [1], the authors reported errors in the legend of Graphical Abstract, Figure 2 and Figure 3.
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The original article [1] has been updated.
The reference list from the paper itself. Each links out to its DOI / PubMed record.