# Correction: Efficiency improvement by using metal–insulator-semiconductor structure in InGaN/GaN micro-light-emitting diodes

**Authors:** Jian Yin, David Hwang, Hossein Zamani Siboni, Ehsanollah Fathi, Reza Chaji, Dayan Ban

PMC · DOI: 10.1007/s12200-024-00114-6 · Frontiers of Optoelectronics · 2024-04-12

## Full-text entities

- **Chemicals:** InGaN/GaN (-)

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Source: https://tomesphere.com/paper/PMC11014829