Manufacturable 300mm platform solution for Field-Free Switching SOT-MRAM
K. Garello, F. Yasin, H. Hody, S. Couet, L. Souriau, S. H. Sharifi, J., Swerts, R. Carpenter, S. Rao, W. Kim, J. Wu, K. K. V. Sethu, M. Pak, N., Jossart, D. Crotti, A. Furn\'emont, G. S. Kar
TL;DR
This paper introduces a manufacturable 300mm platform for field-free SOT-MRAM, demonstrating CMOS-compatible fabrication with reliable, low-power, sub-nanosecond switching, enabling new development avenues in MRAM technology.
Contribution
It presents a novel, integration-friendly field-free SOT-MRAM design compatible with 300mm wafer fabrication, allowing independent optimization of components.
Findings
Device performance comparable to standard SOT-MTJ cells
Reliable sub-ns switching achieved across 300mm wafer
Low writing power demonstrated
Abstract
We propose a field-free switching SOT-MRAM concept that is integration friendly and allows for separate optimization of the field component and SOT/MTJ stack properties. We demonstrate it on a 300 mm wafer, using CMOS-compatible processes, and we show that device performances are similar to our standard SOT-MTJ cells: reliable sub-ns switching with low writing power across the 300mm wafer. Our concept/design opens a new area for MRAM (SOT, STT and VCMA) technology development.
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