# Manufacturable 300mm platform solution for Field-Free Switching SOT-MRAM

## TL;DR

This paper introduces a manufacturable 300mm platform for field-free SOT-MRAM, demonstrating CMOS-compatible fabrication with reliable, low-power, sub-nanosecond switching, enabling new development avenues in MRAM technology.

## Contribution

It presents a novel, integration-friendly field-free SOT-MRAM design compatible with 300mm wafer fabrication, allowing independent optimization of components.

## Key findings

- Device performance comparable to standard SOT-MTJ cells
- Reliable sub-ns switching achieved across 300mm wafer
- Low writing power demonstrated

## Abstract

We propose a field-free switching SOT-MRAM concept that is integration friendly and allows for separate optimization of the field component and SOT/MTJ stack properties. We demonstrate it on a 300 mm wafer, using CMOS-compatible processes, and we show that device performances are similar to our standard SOT-MTJ cells: reliable sub-ns switching with low writing power across the 300mm wafer. Our concept/design opens a new area for MRAM (SOT, STT and VCMA) technology development.

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Source: https://tomesphere.com/paper/1907.08012