Spin-orbit torques and magnetization switching in perpendicularly magnetized epitaxial Pd/Co2FeAl/MgO structures

TL;DR

This paper demonstrates efficient current-induced spin orbit torque switching in epitaxial Pd/Co2FeAl/MgO heterostructures, highlighting their potential for low-energy, high-stability spintronic memory devices.

Contribution

It introduces epitaxial Pd/Co2FeAl/MgO heterostructures with combined low resistivity, high TMR ratio, and strong perpendicular magnetic anisotropy for spin orbit torque MRAM applications.

Findings

Efficient current-induced spin orbit torque switching achieved.

Heterostructures exhibit low resistivity and high TMR ratio.

Strong perpendicular magnetic anisotropy confirmed.

Abstract

We demonstrate efficient current induced spin orbit torque switching in perpendicularly magnetized epitaxial MgO(001)//Pd/Co2FeAl/MgO heterostructures grown by magnetron sputtering. The advantage of such heterostructures for spin orbit torque MRAM devices is that they allow a unique combination of critical ingredients: i) low resistivity required for reduced electric energy consumption during writing, ii) high TMR ratio required for efficient reading and iii) strong perpendicular magnetic anisotropy for increased thermal stability.