# Spin-orbit torques and magnetization switching in perpendicularly magnetized epitaxial Pd/Co2FeAl/MgO structures

## TL;DR

This paper demonstrates efficient current-induced spin orbit torque switching in epitaxial Pd/Co2FeAl/MgO heterostructures, highlighting their potential for low-energy, high-stability spintronic memory devices.

## Contribution

It introduces epitaxial Pd/Co2FeAl/MgO heterostructures with combined low resistivity, high TMR ratio, and strong perpendicular magnetic anisotropy for spin orbit torque MRAM applications.

## Key findings

- Efficient current-induced spin orbit torque switching achieved.
- Heterostructures exhibit low resistivity and high TMR ratio.
- Strong perpendicular magnetic anisotropy confirmed.

## Abstract

We demonstrate efficient current induced spin orbit torque switching in perpendicularly magnetized epitaxial MgO(001)//Pd/Co2FeAl/MgO heterostructures grown by magnetron sputtering. The advantage of such heterostructures for spin orbit torque MRAM devices is that they allow a unique combination of critical ingredients: i) low resistivity required for reduced electric energy consumption during writing, ii) high TMR ratio required for efficient reading and iii) strong perpendicular magnetic anisotropy for increased thermal stability.

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Source: https://tomesphere.com/paper/1906.11917