Spin-valve Effect in Nanoscale Si-based Devices
Duong Dinh Hiep, Masaaki Tanaka, Pham Nam Hai
TL;DR
This paper reviews recent advances in nanoscale silicon-based spin-valve devices, emphasizing the role of ballistic transport in achieving high spin-dependent voltages for potential low-power spintronic applications.
Contribution
It provides a comprehensive review of recent experimental results on spin transport in nanoscale Si spin-valves, highlighting the significance of ballistic transport for device performance.
Findings
Ballistic transport is crucial for high spin-dependent output voltage.
Recent results demonstrate effective spin transport in nanoscale Si devices.
Nanoscale Si spin-valves are promising for low-power spintronics.
Abstract
The silicon (Si) based spin-MOSFET (metal-oxide semiconductor field-effect transistor) is considered to be the building block of low-power-consumption electronics, utilizing spin-degrees of freedom in semiconductor devices. In this paper, we review the latest results on the spin transport in nanoscale Si-based spin-valve devices, which is important to realize the nanoscale spin-MOSFET. Our results demonstrate the importance of ballistic transport in obtaining high spin-dependent output voltage in nanoscale Si spin-valve devices.
Peer Reviews
No public reviews on file for this paper yet. If you reviewed it on a platform where reviews are public (OpenReview, ICLR, NeurIPS, ICML), you can paste yours below so the community can read it here.
Videos
No videos yet. Explain this paper in a talk, walkthrough, or lecture? Add one.
Taxonomy
TopicsAdvancements in Semiconductor Devices and Circuit Design · Semiconductor materials and devices · Surface and Thin Film Phenomena