# Spin-valve Effect in Nanoscale Si-based Devices

## TL;DR

This paper reviews recent advances in nanoscale silicon-based spin-valve devices, emphasizing the role of ballistic transport in achieving high spin-dependent voltages for potential low-power spintronic applications.

## Contribution

It provides a comprehensive review of recent experimental results on spin transport in nanoscale Si spin-valves, highlighting the significance of ballistic transport for device performance.

## Key findings

- Ballistic transport is crucial for high spin-dependent output voltage.
- Recent results demonstrate effective spin transport in nanoscale Si devices.
- Nanoscale Si spin-valves are promising for low-power spintronics.

## Abstract

The silicon (Si) based spin-MOSFET (metal-oxide semiconductor field-effect transistor) is considered to be the building block of low-power-consumption electronics, utilizing spin-degrees of freedom in semiconductor devices. In this paper, we review the latest results on the spin transport in nanoscale Si-based spin-valve devices, which is important to realize the nanoscale spin-MOSFET. Our results demonstrate the importance of ballistic transport in obtaining high spin-dependent output voltage in nanoscale Si spin-valve devices.

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Source: https://tomesphere.com/paper/1812.10210