Excitonic Complexes and Emerging Interlayer Electron-Phonon Coupling in BN Encapsulated Monolayer Semiconductor Alloy: WS0.6Se1.4
Yuze Meng, Tianmeng Wang, Zhipeng Li, Ying Qin, Zhen Lian, Yanwen, Chen, Michael C. Lucking, Kory Beach, Takashi Taniguchi, Kenji Watanabe,, Sefaattin Tongay, Fengqi Song, Humberto Terrones, Su-Fei Shi

TL;DR
This paper demonstrates the optical and valley properties of BN-encapsulated monolayer WS0.6Se1.4, revealing gate-tunable interlayer electron-phonon coupling and enhanced Raman signals, advancing 2D semiconductor research.
Contribution
It introduces the first observation of gate-tunable interlayer electron-phonon coupling in BN/WS0.6Se1.4 heterostructures, enabling exploration of excitonic physics in tunable 2D semiconductors.
Findings
High valley polarization (~60%) in BN/WS0.6Se1.4.
Emerging, gate-tunable interlayer electron-phonon coupling.
Resonant enhancement of Raman signals via exciton states.
Abstract
Monolayer transition metal dichalcogenides (TMDs) possess superior optical properties, including the valley degree of freedom that can be accessed through the excitation light of certain helicity. While WS2 and WSe2 are known for their excellent valley polarization due to the strong spin-orbit coupling, the optical bandgap is limited by the ability to choose from only these two materials. This limitation can be overcome through the monolayer alloy semiconductor, WS2xSe2(1-x), which promises an atomically thin semiconductor with tunable bandgap. In this work, we show that the high-quality BN encapsulated monolayer WS0.6Se1.4 inherits the superior optical properties of tungsten-based TMDs, including a trion splitting of ~ 6 meV and valley polarization as high as ~60%. In particular, we demonstrate for the first time the emerging and gate-tunable interlayer electron-phonon coupling in the…
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