# Excitonic Complexes and Emerging Interlayer Electron-Phonon Coupling in   BN Encapsulated Monolayer Semiconductor Alloy: WS0.6Se1.4

**Authors:** Yuze Meng, Tianmeng Wang, Zhipeng Li, Ying Qin, Zhen Lian, Yanwen, Chen, Michael C. Lucking, Kory Beach, Takashi Taniguchi, Kenji Watanabe,, Sefaattin Tongay, Fengqi Song, Humberto Terrones, Su-Fei Shi

arXiv: 1812.06758 · 2019-01-30

## TL;DR

This paper demonstrates the optical and valley properties of BN-encapsulated monolayer WS0.6Se1.4, revealing gate-tunable interlayer electron-phonon coupling and enhanced Raman signals, advancing 2D semiconductor research.

## Contribution

It introduces the first observation of gate-tunable interlayer electron-phonon coupling in BN/WS0.6Se1.4 heterostructures, enabling exploration of excitonic physics in tunable 2D semiconductors.

## Key findings

- High valley polarization (~60%) in BN/WS0.6Se1.4.
- Emerging, gate-tunable interlayer electron-phonon coupling.
- Resonant enhancement of Raman signals via exciton states.

## Abstract

Monolayer transition metal dichalcogenides (TMDs) possess superior optical properties, including the valley degree of freedom that can be accessed through the excitation light of certain helicity. While WS2 and WSe2 are known for their excellent valley polarization due to the strong spin-orbit coupling, the optical bandgap is limited by the ability to choose from only these two materials. This limitation can be overcome through the monolayer alloy semiconductor, WS2xSe2(1-x), which promises an atomically thin semiconductor with tunable bandgap. In this work, we show that the high-quality BN encapsulated monolayer WS0.6Se1.4 inherits the superior optical properties of tungsten-based TMDs, including a trion splitting of ~ 6 meV and valley polarization as high as ~60%. In particular, we demonstrate for the first time the emerging and gate-tunable interlayer electron-phonon coupling in the BN/WS0.6Se1.4/BN van der Waals heterostructure, which renders the otherwise optically silent Raman modes visible. In addition, the emerging Raman signals can be drastically enhanced by the resonant coupling to the 2s state of the monolayer WS0.6Se1.4 A exciton. The BN/WS2xSe2(1-x)/BN van der Waals heterostructure with a tunable bandgap thus provides an exciting platform for exploring the valley degree of freedom and emerging excitonic physics in two-dimension.

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Source: https://tomesphere.com/paper/1812.06758