Resistive switching in MoSe$_{2}$/BaTiO$_{3}$ hybrid structures

TL;DR

This study demonstrates resistive switching in MoSe₂/BaTiO₃ hybrid structures driven by ferroelectric polarization, showing promising memory characteristics with high switching ratio and stability, suitable for memory devices.

Contribution

It introduces a new hybrid structure exhibiting electroforming-free resistive switching controlled by ferroelectric polarization, advancing memory device technology.

Findings

Resistive switching ratio of approximately 100.

Stable memory window observed.

Switching driven by ferroelectric polarization flipping.

Abstract

Here we study the resistive switching (RS) effect that emerges when ferroelectric BaTiO$_{3}$ (BTO) and few-layers MoSe$_{2}$ are combined in one single structure. The C-V loops reveal the ferroelectric nature of both Al/Si/SiO$_{x}$/BTO/Au and Al/Si/SiO$_{x}$/MoSe$_{2}$/BTO/Au structures and the high quality of the SiO$_{x}$/MoSe$_{2}$ interface in the Al/Si/SiOx/MoSe$_{2}$/Au structure. Al/Si/SiO$_{x}$/MoSe$_{2}$/BTO/Au hybrid structures show the electroforming free resistive switching that is explained on the basis of the modulation of the potential distribution at the MoSe$_{2}$/BTO interface via ferroelectric polarization flipping. This structure shows promising resistive switching characteristics with switching ratio of $\approx{}$10$^{2}$ and a stable memory window, which are highly required for memory applications.