# Resistive switching in MoSe$_{2}$/BaTiO$_{3}$ hybrid structures

## TL;DR

This study demonstrates resistive switching in MoSe₂/BaTiO₃ hybrid structures driven by ferroelectric polarization, showing promising memory characteristics with high switching ratio and stability, suitable for memory devices.

## Contribution

It introduces a new hybrid structure exhibiting electroforming-free resistive switching controlled by ferroelectric polarization, advancing memory device technology.

## Key findings

- Resistive switching ratio of approximately 100.
- Stable memory window observed.
- Switching driven by ferroelectric polarization flipping.

## Abstract

Here we study the resistive switching (RS) effect that emerges when ferroelectric BaTiO$_{3}$ (BTO) and few-layers MoSe$_{2}$ are combined in one single structure. The C-V loops reveal the ferroelectric nature of both Al/Si/SiO$_{x}$/BTO/Au and Al/Si/SiO$_{x}$/MoSe$_{2}$/BTO/Au structures and the high quality of the SiO$_{x}$/MoSe$_{2}$ interface in the Al/Si/SiOx/MoSe$_{2}$/Au structure. Al/Si/SiO$_{x}$/MoSe$_{2}$/BTO/Au hybrid structures show the electroforming free resistive switching that is explained on the basis of the modulation of the potential distribution at the MoSe$_{2}$/BTO interface via ferroelectric polarization flipping. This structure shows promising resistive switching characteristics with switching ratio of $\approx{}$10$^{2}$ and a stable memory window, which are highly required for memory applications.

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Source: https://tomesphere.com/paper/1705.04475