Spatially resolved, energy-filtered imaging of core level and valence band photoemission of highly p and n doped silicon patterns

TL;DR

This study employs advanced photoelectron spectromicroscopy with synchrotron radiation to spatially resolve and quantify local electronic structures in highly doped silicon patterns, aiding microelectronics development.

Contribution

It demonstrates a novel application of energy-filtered imaging to accurately map energy level variations in doped silicon at micron scales.

Findings

Successful spatial mapping of Si 2p core level and valence band.

Quantitative analysis of doping, band bending, and surface photovoltage effects.

Enhanced understanding of local electronic properties in semiconductor patterns.

Abstract

An accurate description of spatial variations in the energy levels of patterned semiconductor substrates on the micron and sub-micron scale as a function of local doping is an important technological challenge for the microelectronics industry. Spatially resolved surface analysis by photoelectron spectromicroscopy can provide an invaluable contribution thanks to the relatively non-destructive, quantitative analysis. We present results on highly doped n and p type patterns on, respectively, p and n type silicon substrates. Using synchrotron radiation and spherical aberration-corrected energy filtering, we have obtained a spectroscopic image series at the Si 2p core level and across the valence band. Local band alignments are extracted, accounting for doping, band bending and surface photovoltage.