# Spatially resolved, energy-filtered imaging of core level and valence band photoemission of highly p and n doped silicon patterns

## TL;DR

This study employs advanced photoelectron spectromicroscopy with synchrotron radiation to spatially resolve and quantify local electronic structures in highly doped silicon patterns, aiding microelectronics development.

## Contribution

It demonstrates a novel application of energy-filtered imaging to accurately map energy level variations in doped silicon at micron scales.

## Key findings

- Successful spatial mapping of Si 2p core level and valence band.
- Quantitative analysis of doping, band bending, and surface photovoltage effects.
- Enhanced understanding of local electronic properties in semiconductor patterns.

## Abstract

An accurate description of spatial variations in the energy levels of patterned semiconductor substrates on the micron and sub-micron scale as a function of local doping is an important technological challenge for the microelectronics industry. Spatially resolved surface analysis by photoelectron spectromicroscopy can provide an invaluable contribution thanks to the relatively non-destructive, quantitative analysis. We present results on highly doped n and p type patterns on, respectively, p and n type silicon substrates. Using synchrotron radiation and spherical aberration-corrected energy filtering, we have obtained a spectroscopic image series at the Si 2p core level and across the valence band. Local band alignments are extracted, accounting for doping, band bending and surface photovoltage.

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Source: https://tomesphere.com/paper/1703.10298