Tuning InP self-assembled quantum structures to telecom wavelength: a versatile original InP(As) nanostructure "workshop"

TL;DR

This paper explores the growth and morphology of InP(As) nanostructures via MOCVD, revealing diverse structures and potential for telecom quantum emitters, offering an alternative to InAs quantum dots.

Contribution

It introduces a new method to produce various InP(As) nanostructures with tunable morphology and demonstrates their potential as telecom wavelength quantum emitters.

Findings

Diverse InP(As) nanostructures achieved by hydride exposure.

Morphological variability with growth parameters.

Preliminary evidence of quantum emission at telecom wavelengths.

Abstract

The influence of hydride exposure on previously unreported self-assembled InP(As) nanostructures is investigated, showing an unexpected morphological variability with growth parameters, and producing a large family of InP(As) nanostructures by metalorganic vapour phase epitaxy, from dome and ring-like structures to double dot in a ring ensembles. Moreover, preliminary microphotoluminescence data are indicating the capped rings system as an interesting candidate for single quantum emitters at telecom wavelengths, potentially becoming a possible alternative to InAs QDs for quantum technology and telecom applications.