# Tuning InP self-assembled quantum structures to telecom wavelength: a versatile original InP(As) nanostructure "workshop"

## TL;DR

This paper explores the growth and morphology of InP(As) nanostructures via MOCVD, revealing diverse structures and potential for telecom quantum emitters, offering an alternative to InAs quantum dots.

## Contribution

It introduces a new method to produce various InP(As) nanostructures with tunable morphology and demonstrates their potential as telecom wavelength quantum emitters.

## Key findings

- Diverse InP(As) nanostructures achieved by hydride exposure.
- Morphological variability with growth parameters.
- Preliminary evidence of quantum emission at telecom wavelengths.

## Abstract

The influence of hydride exposure on previously unreported self-assembled InP(As) nanostructures is investigated, showing an unexpected morphological variability with growth parameters, and producing a large family of InP(As) nanostructures by metalorganic vapour phase epitaxy, from dome and ring-like structures to double dot in a ring ensembles. Moreover, preliminary microphotoluminescence data are indicating the capped rings system as an interesting candidate for single quantum emitters at telecom wavelengths, potentially becoming a possible alternative to InAs QDs for quantum technology and telecom applications.

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Source: https://tomesphere.com/paper/1703.07296