Electron Lifetime Determination in Semiconductor Gamma Detector Arrayes

TL;DR

This paper presents a modified analysis method for accurately determining electron lifetime in semiconductor gamma detector arrays, addressing limitations of the traditional Hecht equation.

Contribution

It introduces a revised expression for mobility-lifetime calculation that improves accuracy over standard methods for detector array measurements.

Findings

The modified expression yields more accurate electron lifetime values.

Standard Hecht equation is inadequate for array measurements.

Improved analysis enhances detector performance evaluation.

Abstract

Hecht equation is not adequate to analyzing standard measurements, of the mobility-lifetime product, carried out with single pixels of detector arrays. A modified expression is calculated, in order to have correct mobility-lifetime values out of experimental data.