Flicker noise in high-speed p-i-n photodiodes

TL;DR

This paper measures flicker noise in high-speed p-i-n photodiodes, revealing very low phase and amplitude noise levels that can be achieved with proper experimental conditions and shielding.

Contribution

It provides the first detailed measurement of flicker noise in high-speed p-i-n photodiodes, highlighting the importance of environmental isolation for low-noise performance.

Findings

Flicker noise coefficients are approximately 1E-12 rad^2/Hz for phase noise.

Flicker noise coefficients are approximately 1E-12 Hz^-1 for amplitude noise.

Proper shielding and environment are crucial to observe the intrinsic low noise levels.

Abstract

The microwave signal at the output of a photodiode that detects a modulated optical beam contains the phase noise phi(t) and the amplitude noise alpha(t) of the detector. Beside the white noise, which is well understood, the spectral densities S_phi(f) and S_alpha(f) show flicker noise, proportional to 1/f. We report on the measurement of the phase and amplitude noise of high-speed p-i-n photodiodes. The main result is that the flicker coefficient of the samples is approximately 1E-12 rad^2/Hz (-120dB) for phase noise, and approximately 1E-12 Hz^-1 (-120dB) for amplitude noise. These values could be observed only after solving a number of experimental problems and in a protected environment. By contrast, in ordinary conditions insufficient EMI isolation, and also insufficient mechanical isolation, are responsible for additional noise to be taken in. This suggests that if package and EMC are revisited, applications can take the full benefit from the surprisingly low noise of the p-i-n photodiodes.