Analysis of trap spectra in LEC and epitaxial GaAs
J. Vaitkus (1), E.Gaubas (1), V.Kazukauskas (1), V.Rinkevicius (1),, J.Storasta (1), R.Tomasiunas (1) K.M.Smith (2), V.O'Shea (2) ((1) Institute, of Materials Science, Applied Research & Semiconductor Physics Department,, Vilnius University, Vilnius, Lithuania
TL;DR
This paper compares methods for measuring trap parameters in GaAs, analyzing how traps affect material properties using transient photoconductivity and thermally stimulated effects, with a focus on crystal micro-inhomogeneities.
Contribution
It provides a comparative analysis of trap measurement techniques and explores the impact of micro-inhomogeneities on trap-related phenomena in GaAs.
Findings
TSC features are influenced by crystal micro-inhomogeneities.
Different measurement methods reveal distinct trap characteristics.
Trap effects significantly impact GaAs electronic properties.
Abstract
Different methods of trap parameter measurement are analysed. Transient photoconductivity and thermally stimulated effects were used to investigate the influence of traps in LEC SI-GaAs and high resistivity epitaxial GaAs. The peculiarities of the TSC were analysed and shown to be related to the influence of crystal micro-inhomogeneities.
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