Model of charge transport in Semi-Insulating Undoped GaAs microstrip detectors
R. Bates et al (University of Glasgow)
TL;DR
This paper introduces a simulation method for charge transport in semi-insulating undoped GaAs microstrip detectors, combining electric field calculation, carrier drift modeling, and circuit response analysis.
Contribution
It proposes a new integrated simulation approach and a simple electric field model based on EL2 levels to improve understanding of detector response.
Findings
Electric field modeling using EL2 levels explains measurements.
Simulation combines field calculation, carrier drift, and circuit response.
Method enhances design and analysis of GaAs microstrip detectors.
Abstract
In this paper we present a method for simulating the response of microstrip detectors to minimum ionizing particles, making use of a program for field calculation, a program for carrier drift and SPICE for circuit response. A knowledge of the electric field is essential for any further improvement of the program. A simple model involving EL2 levels in the metastable state is proposed to explain some measurements of electric field.
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Taxonomy
TopicsParticle Detector Development and Performance