Characterization of Prototype BTeV Silicon Pixel Sensors Before and After Irradiation

TL;DR

This study evaluates the electrical performance of silicon pixel sensors with different designs before and after irradiation, providing insights into their radiation hardness for high-energy physics applications.

Contribution

It presents a comparative analysis of various silicon pixel sensor designs subjected to proton irradiation, highlighting effects of oxygen enrichment and p-stop layouts.

Findings

Sensor performance degrades after irradiation but varies with design.

Oxygen-enriched silicon shows improved radiation tolerance.

Different p-stop layouts influence sensor robustness.

Abstract

We report on measurements performed on silicon pixel sensor prototypes exposed to a 200 MeV proton beam at the Indiana University Cyclotron Facility. The sensors are of n+/n/p+ type with multi-guard ring structures on the p+-side and p-stop electrode isolation on the n+-side. Electrical characterization of the devices was performed before and after irradiation up to a proton fluence of 4E14 p/cm2. We tested pixel sensors fabricated from normal and oxygen-enriched silicon wafers and with two different p-stop isolation layouts: common p-stop and individual p-stop.