Single Event Effects in the Pixel readout chip for BTeV

TL;DR

This paper reports on irradiation tests of pixel readout chips designed for high-radiation environments, demonstrating their robustness and manageable single event effects in a proton beam test.

Contribution

It presents the radiation tolerance and single event effect performance of a new pixel readout chip design for high-radiation experiments.

Findings

The ASIC tolerates large radiation doses.

Radiation induced effects are manageable.

Prototypes were tested with 200 MeV proton beam.

Abstract

In future experiments the readout electronics for pixel detectors is required to be resistant to a very high radiation level. In this paper we report on irradiation tests performed on several preFPIX2 prototype pixel readout chips for the BTeV experiment exposed to a 200 MeV proton beam. The prototype chips have been implemented in commercial 0.25 um CMOS processes following radiation tolerant design rules. The results show that this ASIC design tolerates a large total radiation dose, and that radiation induced Single Event Effects occur at a manageable level.