The Growth of Interaction Cross-Section of 4.3 GeV Electrons in Excited Crystals
A. Aganyants
TL;DR
This paper investigates how the interaction cross-section of 4.3 GeV electrons changes when macro-conditions like crystal vacuum are altered, providing a qualitative explanation for observed phenomena.
Contribution
It presents new observations on relativistic electron interactions in excited crystals and offers a qualitative explanation for the changes in interaction cross-section.
Findings
Interaction cross-section varies with crystal vacuum conditions
Qualitative explanation for the altered electron interactions
Insights into microscopic properties of relativistic electrons
Abstract
The microscopic properties of the interactions of relativistic electrons were observed to alter when macro-conditions, such as the crystal vacuum, were changed. A qualitative explanation of the phenomenon is given.
Peer Reviews
No public reviews on file for this paper yet. If you reviewed it on a platform where reviews are public (OpenReview, ICLR, NeurIPS, ICML), you can paste yours below so the community can read it here.
Videos
No videos yet. Explain this paper in a talk, walkthrough, or lecture? Add one.
Taxonomy
TopicsSemiconductor Quantum Structures and Devices · GaN-based semiconductor devices and materials