Study of the spatial resolution achievable with the BTeV pixel sensors

TL;DR

This paper presents a Monte Carlo simulation to predict the spatial resolution of BTeV silicon pixel sensors, considering various physical effects, and compares the predictions with experimental test beam measurements.

Contribution

It introduces a detailed simulation model for pixel sensor resolution and validates it against real experimental data.

Findings

Simulation accurately predicts spatial resolution

Good agreement between simulation and test beam data

Provides insights into sensor performance factors

Abstract

A Monte Carlo simulation has been developed to predict the spatial resolution of silicon pixel detectors. The results discussed in this paper focus on the unit cell geometry of 50 $\mu$m x 400 $\mu$m, as chosen for BTeV. Effects taken into account include energy deposition fluctuations along the charged particle path, diffusion, magnetic field and response of the front end electronics. We compare our predictions with measurements from a recent test beam study performed at Fermilab.