Capacitance of Silicon Pixels

TL;DR

This paper presents detailed capacitance measurements of various silicon pixel sensor types, analyzing inter-pixel and backplane contributions, temperature effects, and radiation impact relevant to high-energy physics experiments.

Contribution

It provides comprehensive capacitance data for different silicon pixel designs, including effects of irradiation and temperature, aiding sensor optimization for particle detectors.

Findings

Capacitance varies with implant and gap widths.

Radiation exposure affects sensor capacitance.

Temperature influences capacitance measurements.

Abstract

Capacitance measurements have been made on silicon pixel sensors of types n+ on n, p+ on n, and n+ on p. The arrays test a variety of implant and gap widths, and the n+ on n devices test several p-stop designs. The measurements examine inter-pixel and backplane contributions and include studies of temperature dependence. Measurements were made before and after irradiation with fluences relevant to LHC experiments and Fermilab Tevatron Run 2.