Analysis of negative magnetoresistance. Statistics of closed paths. II. Experiment

TL;DR

This paper introduces a novel method to analyze negative magnetoresistance in 2D semiconductors, extracting detailed information about closed path areas and their length dependence from Fourier transforms of experimental data.

Contribution

It proposes a new analytical approach for interpreting negative magnetoresistance, enabling detailed insights into closed path statistics in 2D semiconductor structures.

Findings

Different relations between momentum and phase relaxation times affect the area dependence of closed paths.

The method successfully processes experimental data to reveal path area distributions.

Distinct behaviors of closed paths are observed based on relaxation time ratios.

Abstract

It is shown that a new kind of information can be extracted from the Fourier transform of negative magnetoresistance in 2D semiconductor structures. The procedure proposed provides the information on the area distribution function of closed paths and on the area dependence of the average length of closed paths. Based on this line of attack the method of analysis of the negative magnetoresistance is suggested. The method has been used to process the experimental data on negative magnetoresistance in 2D structures with different relations between the momentum and phase relaxation times. It is demonstrated this fact leads to distinction in the area dependence of the average length of closed paths.