Fano Resonances in Electronic Transport through a Single Electron Transistor

TL;DR

This paper reports the observation of Fano resonances in a single electron transistor, demonstrating interference effects in quantum transport and showing how gate voltages can tune these phenomena.

Contribution

It presents the first experimental observation of gate-tunable Fano resonances in a single electron transistor, highlighting interference effects in quantum electronic systems.

Findings

Fano resonances observed in conductance measurements

Interference between resonant and nonresonant paths demonstrated

Gate voltages can control the interference effects

Abstract

We have observed asymmetric Fano resonances in the conductance of a single electron transistor resulting from interference between a resonant and a nonresonant path through the system. The resonant component shows all the features typical of quantum dots, but the origin of the non-resonant path is unclear. A unique feature of this experimental system, compared to others that show Fano line shapes, is that changing the voltages on various gates allows one to alter the interference between the two paths.