Binding Energy of Impurity in a Size Quantized Coated Semiconductor Wire: Role of the Dielectric-Constant Mismatch

TL;DR

This paper investigates how dielectric constant mismatch affects the impurity binding energy in size-quantized semiconductor wires, considering magnetic fields and alloy composition, using a staircase infinitely deep potential well model.

Contribution

It introduces a detailed analysis of impurity binding energy dependence on dielectric mismatch, alloy concentration, and magnetic field within a new SIW potential well framework.

Findings

Binding energy varies with dielectric mismatch and alloy concentration.

Magnetic field influences impurity binding energy.

Model provides insights for GaAs-Ga_{1-x}Al_{x}As systems.

Abstract

Within the framework of staircase infinitely deep (SIW) potential well model the effect of dielectric constant mismatch between the size-quantized semiconducting wire, coating and surrounding environment on impurity binding energy is considered. Calculations are done in both the absence and presence of magnetic field applied along the wire axis. By the variation method the dependences of binding energy of hydrogen-like impurity located on the wire axis on the alloy concentration, effective mass ratio, dielectric constant mismatch and magnetic field are found for the GaAs-Ga_{1-x}Al_{x}AS system.