Metal-Insulator oscillations in a Two-dimensional Electron-Hole system
R.J. Nicholas, K. Takashina, M. Lakrimi, B. Kardynal, S. Khym, N.J., Mason (Clarendon Lab, Oxford Univ.), D.M. Symons, D. K. Maude, J.C. Portal, (MIFKF-CNRS Grenoble)
TL;DR
This paper investigates the electrical transport in a bipolar InAs/GaSb system, revealing oscillations between insulating and metallic states and proposing a new edge state model related to observed quantum Hall effects.
Contribution
It introduces a novel looped edge state model explaining the oscillations and insulating behavior in a two-dimensional electron-hole system.
Findings
Resistivity oscillates between insulating and metallic states.
Quantum Hall conductance oscillates from 0 to e^2/h.
A new edge state picture is proposed.
Abstract
The electrical transport properties of a bipolar InAs/GaSb system have been studied in magnetic field. The resistivity oscillates between insulating and metallic behaviour while the quantum Hall effect shows a digital character oscillating from 0 to 1 conducatance quantum e^2/h. The insulating behaviour is attributed to the formation of a total energy gap in the system. A novel looped edge state picture is proposed associated with the appearance of a voltage between Hall probes which is symmetric on magnetic field reversal.
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