Excitonic lasing in semiconductor quantum wires

TL;DR

This paper reports the first direct experimental evidence of excitonic lasing in semiconductor quantum wires, demonstrating laser emission from localized excitons at low temperature with a specific exciton density at threshold.

Contribution

It provides the first direct experimental evidence of excitonic lasing in V-groove quantum wire structures, highlighting the role of localized excitons in lasing.

Findings

Lasing occurs at 10 K from localized excitons.

Lasing threshold involves an exciton density of about 1.8×10^5 cm^-1.

Lasing is observed within an inhomogeneously-broadened luminescence line.

Abstract

Direct experimental evidences for excitonic lasing is obtained in optically pumped V-groove quantum wire structures. We demonstrate that laser emission at a temperature of 10 K arises from a population inversion of localized excitons within the inhomogenously-broadened luminescence line. At the lasing threshold, we estimate a maximum exciton density of about 1.8 105cm-1.