Wannier-functions characterization of floating bonds in a-Si
M. Fornari (NRL Washington DC), N. Marzari (NRL Washington DC), M., Peressi (INFM Trieste), A. Baldereschi (INFM Trieste, IPA-EPFL, Lausanne)

TL;DR
This paper uses Wannier functions and density-functional calculations to analyze the electronic structure of over-coordinated defects in amorphous silicon, revealing delocalized states and highly polarizable bonds.
Contribution
It introduces a Wannier-function based approach to characterize the electronic properties of defects in amorphous silicon, linking topology and electronic behavior.
Findings
Five-fold coordinated defects produce delocalized electronic states.
Defective atoms exhibit high Born effective charges.
Defects lead to highly polarizable bonds.
Abstract
We investigate the electronic structure of over-coordinated defects in amorphous silicon via density-functional total-energy calculations, with the aim of understanding the relationship between topological and electronic properties on a microscopic scale. Maximally-localized Wannier functions are computed in order to characterize the bonding and the electronic properties of these defects. The five-fold coordination defects give rise to delocalized states extending over several nearest neighbors, and therefore to very polarizable bonds and anomalously high Born effective charges for the defective atoms.
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Taxonomy
TopicsSilicon Nanostructures and Photoluminescence · Thin-Film Transistor Technologies · Semiconductor materials and interfaces
