A possible role of D^- band in hopping conductivity and metal-insulator transition in 2D structures
V.I.Kozub, N. V.Agrinskaya (A. F. Ioffe Institute, Saint, Petersburg, Russia), S. I.Khondaker (Dhaka University, Bangladesh), I., Shlimak (Bar-Ilan University, Israel)

TL;DR
This paper proposes a two-band model where the D^- band dominates conductivity, explaining unusual hopping magnetoresistance and metal-insulator transition features in 2D structures, supported by experimental evidence.
Contribution
It introduces a simple two-band model emphasizing the D^- band role in 2D hopping conductivity and metal-insulator transition, supported by experimental data.
Findings
D^- band dominates conductivity in the model
Experimental data supports the model's validity
Explains unusual magnetoresistance features
Abstract
A simple two-band model is suggested explaining recently reported unusual features for hopping magnetoresistance and the metal-insulator transition in 2D structures. The model implies that the conductivity is dominated by the upper Hubbard band (D^- band). Experimental studies of hopping magnetoresistance for Si delta doped GaAs/AlGaAs heterostructure give additional evidences for the model.
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Taxonomy
TopicsSurface and Thin Film Phenomena · Semiconductor materials and devices · Graphene research and applications
