In-Plane Magnetolumnescence of Modulation-Doped GaAs/AlGaAs Coupled Double Quantum Wells

TL;DR

This study investigates how in-plane magnetic fields affect photoluminescence in GaAs/AlGaAs coupled double quantum wells, revealing mobility-dependent spectral features and aligning with theoretical models.

Contribution

It provides new insights into the magnetic field effects on coupled quantum wells, highlighting the role of sample mobility in spectral behavior.

Findings

Lower mobility samples show an N-type kink in transition energy.

Higher mobility samples exhibit a linear magnetic field dependence.

Results agree with theoretical predictions on homogeneous broadening.

Abstract

In-plane magnetic field photoluminescence spectra from a series of GaAs/AlGaAs coupled double quantum wells show distinctive doublet structures related to the symmetric and antisymmetric states. The magnetic field behavior of the upper transition from the antisymmetric state strongly depends on sample mobility. In lower mobility samples, the transition energy shows an $\cal N$-type kink with fields (namely a maximum followed by a minimum), whereas higher mobility samples have a linear dependence. The former is due to a homogeneous broadening of electron and hole states and the results are in good agreement with theoretical calculations.