Coexistence of Weak Localization and a Metallic Phase in Si/SiGe Quantum Wells

TL;DR

This paper reports the coexistence of metallic behavior and weak localization in Si/SiGe quantum wells, showing how quantum interference effects influence transport properties across different phases.

Contribution

It demonstrates the simultaneous presence of weak localization and metallic behavior in Si/SiGe quantum wells, highlighting their interplay in different regimes.

Findings

Weak localization reduces metallic behavior near zero magnetic field

Positive magnetoresistivity appears in the insulating phase

Weak localization persists deep in the metallic regime

Abstract

Magnetoresistivity measurements on p-type Si/SiGe quantum wells reveal the coexistence of a metallic behavior and weak localization. Deep in the metallic regime, pronounced weak localization reduces the metallic behavior around zero magnetic field without destroying it. In the insulating phase, a positive magnetoresistivity emerges close to B=0, possibly related to spin-orbit interactions.