Injection statistics simulator for dynamic analysis of noise in mesoscopic devices
T. Gonzalez, J. Mateos, D. Pardo, L. Varani, and L. Reggiani

TL;DR
This paper introduces a model for electron injection in mesoscopic devices that accurately captures carrier statistics across various degeneracy levels, validated through Monte Carlo simulations matching analytical results.
Contribution
The paper presents a novel injection statistics model for mesoscopic conductors that accurately reproduces conductance and noise characteristics across different degeneracy regimes.
Findings
Monte Carlo simulations agree with analytical results.
The model reproduces electrical and thermal conductance units.
Excellent match in average and noise characteristics.
Abstract
We present a model for electron injection from thermal reservoirs which is applied to particle simulations of one-dimensional mesoscopic conductors. The statistics of injected carriers is correctly described from nondegenerate to completely degenerate conditions. The model is validated by comparing Monte Carlo simulations with existing analytical results for the case of ballistic conductors. An excellent agreement is found for average and noise characteristics, in particular, the fundamental unities of electrical and thermal conductances are exactly reproduced.
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