Carrier relaxation dynamics in intra-gap states: the case of the superconductor Y Ba_2 Cu_3O_7-delta and the charge-density-wave semiconductor K_0.3MoO_3

TL;DR

This study models slow carrier relaxation in high-temperature superconductors and charge-density-wave materials, revealing intra-gap localized states likely due to localized charges, distinguished by their unique optical response dynamics.

Contribution

It introduces a model for carrier relaxation in intra-gap states that explains slow dynamics in superconductors and CDW systems, highlighting the role of localized intra-gap states.

Findings

Intra-gap localized states are present in YBa2Cu3O7-delta and K0.3MoO3.

The model with a BCS-like gap accurately describes the relaxation data.

Localized charges are the probable origin of intra-gap states.

Abstract

The unusual slow carrier relaxation dynamics - observed in femtosecond pump-probe experiments on high-temperature superconductors and recently also in a charge-density-wave system - is analyzed in terms of a model for relaxation of carriers in intra-gap states. The data on YBa_2Cu_3O_7-delta near optimum doping and K_0.3$MoO_3 are found to be described very well with the model using a BCS-like gap which closes at T_c. From the analysis of the data we conclude that a significant intra-gap density of localized states exists in these materials, which can be clearly distinguished from quasiparticle states by the time-resolved optical experiments because of the different time- and temperature-dependences of the photoinduced transmission or reflection. Localized charges are suggested to be the most likely origin of the intra-gap states, while the similarity of the response in the two materials appear to exclude spin and vortex excitations.