Metallic low-temperature resistivity in 2D over an extended temperature range

TL;DR

This study extends the temperature range of resistivity measurements in dilute 2D silicon electron systems down to 35 mK, revealing continuous metallic behavior without low-temperature up-turns and temperature-independent resistivity at the critical density.

Contribution

It provides new low-temperature data on 2D electron resistivity, showing persistent metallic behavior and critical density properties over an extended temperature range.

Findings

Resistivity decreases with temperature on the metallic side.

No low-temperature up-turn in resistivity observed.

Resistivity is temperature-independent at the critical density.

Abstract

We report measurements of the zero-field resistivity in dilute 2D electron system in silicon at temperatures down to 35 mK. This extends the previously explored range of temperatures by almost an order of magnitude. On the metallic side, the resistivity near the metal-insulator transition continues to decrease with decreasing temperature and shows no low-temperature up-turn. At the critical electron density, the resistivity is found to be temperature-independent in the entire temperature range 35 mK to 1 K.