Parallel magnetic field induced giant magnetoresistance in low density {\it quasi}-two dimensional layers

TL;DR

This paper offers a theoretical explanation for the giant positive magnetoresistance observed in high mobility low density quasi-two dimensional electron and hole systems, emphasizing the role of parallel magnetic fields and finite layer thickness.

Contribution

It introduces a novel theoretical model linking parallel magnetic fields to orbital motion effects in low density quasi-two dimensional systems.

Findings

Giant positive magnetoresistance explained by orbital coupling

Finite layer thickness crucial for magnetoresistance effect

Low density enhances the magnetoresistance response

Abstract

We provide a possible theoretical explanation for the recently observed giant positive magnetoresistance in high mobility low density {\it quasi}-two dimensional electron and hole systems. Our explanation is based on the strong coupling of the parallel field to the {\it orbital} motion arising from the {\it finite} layer thickness and the large Fermi wavelength of the {\it quasi}-two dimensional system at low carrier densities.