Interband Light Absorption at a Rough Interface
L. Braginsky
TL;DR
This paper analyzes how interface roughness enhances light absorption in porous and microcrystalline semiconductors by enabling electron momentum nonconservation, especially at rough boundaries.
Contribution
It introduces the impact of interface roughness on light absorption, highlighting the role of electron momentum nonconservation at rough boundaries in semiconductors.
Findings
Enhanced absorption in porous semiconductors due to interface effects
Rough boundaries significantly increase the share of interface atoms
Electron momentum nonconservation boosts absorption at interfaces
Abstract
Light absorption at the boundary of indirect-band-gap and direct-forbidden gap semiconductors is analyzed. It is found that the possibility of the electron momentum nonconservation at the interface leads to essential enhancement of absorption in porous and microcrystalline semiconductors. The effect is more pronounced at a rough boundary due to enlargement of the share of the interface atoms.
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