Magnetotransport properties of (Ga,Mn)As investigated at low temperature and high magnetic field

TL;DR

This study investigates the magnetotransport properties of (Ga,Mn)As at very low temperatures and high magnetic fields, revealing details about hole concentration and exchange energy in the material.

Contribution

It provides detailed measurements of (Ga,Mn)As under extreme conditions and determines key parameters like hole concentration and p-d exchange energy.

Findings

Hole concentration p = 3.5x10^20 cm^-3

p-d exchange energy |N0beta| ~ 1.5 eV

Resistivity dependencies analyzed at low temperature

Abstract

Magnetotransport properties of ferromagnetic semiconductor (Ga,Mn)As have been investigated. Measurements at low temperature (50 mK) and high magnetic field (<= 27 T) have been employed in order to determine the hole concentration p = 3.5x10^20 cm ^-3 of a metallic (Ga0.947Mn0.053)As layer. The analysis of the temperature and magnetic field dependencies of the resistivity in the paramagnetic region was performed with the use of the above value of p, which gave the magnitude of p-d exchange energy |N0beta | ~ 1.5 eV.