Magnetization-controlled spin transport in DyAs/GaAs layers

TL;DR

This study investigates the electrical transport properties of DyAs epitaxial layers on GaAs, revealing magnetic field-induced phase transitions and anisotropic behavior, with potential implications for spintronic applications.

Contribution

It provides new insights into the magnetic field effects on spin transport and phase transitions in DyAs/GaAs layers, including an empirical magnetic phase diagram.

Findings

Two resistance peaks at 0.2T and 2.5T linked to spin-disorder scattering

Magnetic phase diagram derived from temperature-dependent data

Transport properties depend on magnetic field orientation

Abstract

Electrical transport properties of DyAs epitaxial layers grown on GaAs have been investigated at various temperatures and magnetic fields up to 12T. The measured longitudinal resistances show two distinct peaks at fields around 0.2 and 2.5T which are believed to be related to the strong spin-disorder scattering occurring at the phase transition boundaries induced by external magnetic field. An empirical magnetic phase diagram is deduced from the temperature dependent experiment, and the anisotropic transport properties are also presented for various magnetic field directions with respect to the current flow.