Structure determination of the indium-induced Si(111)-(4x1) reconstruction by surface x-ray diffraction
O. Bunk, G. Falkenberg, J.H. Zeysing, L. Lottermoser, and R.L., Johnson, M. Nielsen, F. Berg-Rasmussen, J. Baker, and R. Feidenhans'l

TL;DR
This paper presents a detailed structural model of the indium-induced Si(111)-(4x1) surface reconstruction, determined through extensive surface x-ray diffraction data analysis, revealing chains of silicon and indium atoms on the surface.
Contribution
The study provides the first comprehensive structural model of the Si(111)-(4x1) reconstruction induced by indium, integrating multiple experimental data sources.
Findings
Chains of silicon atoms alternate with zigzag indium chains.
Indium coverage corresponds to one monolayer.
Model explains all previously published experimental data.
Abstract
A detailed structural model for the indium-induced Si(111)-(4x1) surface reconstruction has been determined by analyzing an extensive set of x-ray-diffraction data recorded with monochromatic ( = 9.1 keV) synchrotron radiation. The reconstruction is quasi-one-dimensional. The main features in the structure are chains of silicon atoms alternating with zigzag chains of indium atoms on top of an essentially unperturbed silicon lattice. The indium coverage corresponds to one monolayer. The structural model consistently explains all previously published experimental data.
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